2n7002w ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com 2n7002w rev. a1 1 february 2010 2n7002w n-channel enhancement mode field effect transistor features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra-small surface mount package ? lead free/rohs compliant absolute maximum ratings * t a = 25c unless otherwise noted * these ratings are limiting values above which the servic eability of any semiconductor device may by impaired. thermal characteristics * device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch. minimum land pad size. symbol parameter value units v dss drain-source voltage 60 v v dgr drain-gate voltage r gs ? 1.0m ? 60 v v gss gate-source voltage continuous pulsed 20 40 v i d drain current continuous continuous @ 100c pulsed 115 73 800 ma t j , t stg junction and storage temperature range -55 to +150 ? c symbol parameter value units p d total device dissipation derating above t a = 25c 200 1.6 mw mw/ ? c r ? ja thermal resistance, junction to ambient * 625 ? c/w s d g sot - 323 marking : 2n
2n7002w ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com 2n7002w rev. a1 2 electrical characteristics t a = 25c unless otherwise noted off characteristics (note1) on characteristics (note1) dynamic characteristics switching characteristics note1 : short duration test pulse used to minimize self-heating effect. symbol parameter test condition min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =10ua 60 78 - v i dss zero gate voltage drain current v ds =60v, v gs =0v v ds =60v, v gs =0v, @t c =125 ? c -0.001 7 1.0 500 ? a i gss gate-body leakage v gs =20v, v ds =0v - 0.2 10 na v gs(th) gate threshold voltage v ds =v gs , i d =250 ? a 1.0 1.76 2.0 v r ds(on) static drain-source on-resistance v gs =5v, i d =0.05a, v gs =10v, i d =0.5a, @t j =125c - - 1.6 2.53 7.5 13.5 ? i d(on) on-state drain current v gs =10v, v ds =7.5v 0.5 1.43 - a g fs forward transconductance v ds =10v, i d =0.2a 80 356.5 - ms c iss input capacitance v ds =25v, v gs =0v, f=1.0mhz -37.850pf c oss output capacitance - 12.4 25 pf c rss reverse transfer capacitance - 6.5 7.0 pf t d(on) turn-on delay time v dd =30v, i d =0.2a, v gen =10v r l =150 ? , r gen =25 ? -5.8520 ns t d(off) turn-off delay time - 12.5 20
2n7002w ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com 2 n 7002w rev. a 1 3 typical performance characteristics figure 1. on-region characteristics figure 2. on-resistance variation with gate voltage and drain current figure 3. on-resistance variation with temperature figure 4. on-resistance variation with gate-source voltage figure 5. transfer characteristics figure 6. gate threshold variation with temperature 012345678910 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2v 3v 4v 5v v gs = 10v i d . drain-source current(a) v ds . drain-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.0 1.5 2.0 2.5 3.0 (?) 9v 8v 5v 6v 10v 7v 4v 4.5v v gs = 3v r ds (on), drani-source on-resistance i d . drain-source current(a) -50 0 50 100 150 0.5 1.0 1.5 2.0 2.5 3.0 (?) v gs = 10v i d = 500 ma r ds (on) drani-source on-resistance t j . junction temperature( o c) 24681 0 1.0 1.5 2.0 2.5 3.0 i d = 500 ma (?) i d = 50 ma r ds (on), drani-source on-resistance v gs . gate-source voltage (v) 23456 0.0 0.2 0.4 0.6 0.8 1.0 v ds = 10v 75 o c 125 o c 150 o c 25 o c t j = -25 o c i d . drain-source current(a) v gs . gate-source voltage (v) -50 0 50 100 150 1.0 1.5 2.0 2.5 i d = 0.25 ma i d = 1 ma v gs = v ds vth, gate-source threshold voltage (v) t j . junction temperature( o c)
2n7002w ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com 2 n 7002w rev. a 1 4 typical performance characteristics figure 7. reverse drain current variation with diode forward voltage and temperature figure 8. power derating 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 -55 o c v gs = 0 v 150 o c 25 o c v sd , body diode forward voltage [v] i s reverse drain current, [ma] 0 25 50 75 100 125 150 175 0 40 80 120 160 200 240 280 p c [mw], power dissipation t a [ o c], ambient temperature
2n7002w ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com 2 n 7002w rev. a 1 5 package dimensions sot323
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